CSD18511KTTT
manufacturer:
Texas instruments
Description:
40-V N-CHANNEL NEXFET POWER MOS
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
110A (Ta), 194A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
64nC @ 10V
Manufacturer ::
Texas Instruments
Minimum Quantity ::
50
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
950
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
NexFET™
Input Capacitance (Ciss) (Max) @ Vds ::
5940pF @ 20V
Supplier Device Package ::
DDPAK/TO-263-3
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
2.6 MOhm @ 100A, 10V
Power Dissipation (Max) ::
188W (Ta)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2.4V @ 250µA
Drain To Source Voltage (Vdss) ::
40V
Introduction
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