IPAW60R360P7SXKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 650V 9A TO220
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±30V
Current - Continuous Drain (Id) @ 25°C ::
9A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Through Hole
Gate Charge (Qg) (Max) @ Vgs ::
13nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-40°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
CoolMOS™ P7
Input Capacitance (Ciss) (Max) @ Vds ::
555pF @ 400V
Supplier Device Package ::
PG-TO220 Full Pack
Part Status ::
Active
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
360 MOhm @ 2.7A, 10V
Power Dissipation (Max) ::
22W (Tc)
Package / Case ::
TO-220-3 Full Pack
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4V @ 140µA
Drain To Source Voltage (Vdss) ::
650V
Introduction
The IPAW60R360P7SXKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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