TPS1101D
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
+2V, -15V
Current - Continuous Drain (Id) @ 25°C ::
2.3A (Ta)
@ Qty ::
0
FET Type ::
P-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
11.25nC @ 10V
Manufacturer ::
Texas Instruments
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
2.7V, 10V
Factory Stock ::
0
Operating Temperature ::
-40°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
-
Supplier Device Package ::
8-SOIC
Part Status ::
Active
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
90 MOhm @ 2.5A, 10V
Power Dissipation (Max) ::
791mW (Ta)
Package / Case ::
8-SOIC (0.154", 3.90mm Width)
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
1.5V @ 250µA
Drain To Source Voltage (Vdss) ::
15V
Introduction
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