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IRFS59N10DPBF

manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 59A D2PAK
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±30V
Current - Continuous Drain (Id) @ 25°C ::
59A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
114nC @ 10V
Manufacturer ::
Infineon Technologies
Minimum Quantity ::
1
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds ::
2450pF @ 25V
Supplier Device Package ::
D2PAK
Packaging ::
Tube
Rds On (Max) @ Id, Vgs ::
25 MOhm @ 35.4A, 10V
Power Dissipation (Max) ::
3.8W (Ta), 200W (Tc)
Package / Case ::
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
5.5V @ 250µA
Drain To Source Voltage (Vdss) ::
100V
Introduction
The IRFS59N10DPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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