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Home > products > Semiconductors > DMT6009LFG-7

DMT6009LFG-7

manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V 11A
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±16V
Current - Continuous Drain (Id) @ 25°C ::
11A (Ta), 34A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
33.5nC @ 10V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
2000
Drive Voltage (Max Rds On, Min Rds On) ::
4.5V, 10V
Factory Stock ::
6000
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
1925pF @ 30V
Supplier Device Package ::
PowerDI3333-8
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
10 MOhm @ 13.5A, 10V
Power Dissipation (Max) ::
2.08W (Ta), 19.2W (Tc)
Package / Case ::
8-PowerWDFN
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
2V @ 250µA
Drain To Source Voltage (Vdss) ::
60V
Introduction
The DMT6009LFG-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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