CSD19536KTTT
manufacturer:
Texas instruments
Description:
MOSFET N-CH 100V 200A TO263
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±20V
Current - Continuous Drain (Id) @ 25°C ::
200A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
153nC @ 10V
Manufacturer ::
Texas Instruments
Minimum Quantity ::
50
Drive Voltage (Max Rds On, Min Rds On) ::
6V, 10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Feature ::
-
Series ::
NexFET™
Input Capacitance (Ciss) (Max) @ Vds ::
12000pF @ 50V
Supplier Device Package ::
DDPAK/TO-263-3
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
2.4 MOhm @ 100A, 10V
Power Dissipation (Max) ::
375W (Tc)
Package / Case ::
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
3.2V @ 250µA
Drain To Source Voltage (Vdss) ::
100V
Introduction
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