STD11N60M2-EP
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±25V
Current - Continuous Drain (Id) @ 25°C ::
7.5A (Tc)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
12.4nC @ 10V
Manufacturer ::
STMicroelectronics
Minimum Quantity ::
2500
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
MDmesh™ M2-EP
Input Capacitance (Ciss) (Max) @ Vds ::
390pF @ 100V
Supplier Device Package ::
DPAK
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
595 MOhm @ 3.75A, 10V
Power Dissipation (Max) ::
85W (Tc)
Package / Case ::
TO-252-3, DPak (2 Leads + Tab), SC-63
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
4.75V @ 250µA
Drain To Source Voltage (Vdss) ::
600V
Introduction
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