BSG0810NDIATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 25V 19A/39A 8TISON
Category:
Semiconductors
Specifications
Supplier Device Package ::
PG-TISON-8
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
5000
Input Capacitance (Ciss) (Max) @ Vds ::
1040pF @ 12V
Package / Case ::
8-PowerTDFN
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
19A, 39A
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 155°C (TJ)
FET Type ::
2 N-Channel (Dual) Asymmetrical
FET Feature ::
Logic Level Gate, 4.5V Drive
Drain To Source Voltage (Vdss) ::
25V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
8.4nC @ 4.5V
Rds On (Max) @ Id, Vgs ::
3 MOhm @ 20A, 10V
Power - Max ::
2.5W
Vgs(th) (Max) @ Id ::
2V @ 250µA
Series ::
OptiMOS™
Manufacturer ::
Infineon Technologies
Introduction
The BSG0810NDIATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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