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Home > products > Semiconductors > IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 100V 20A TDSON-8
Category:
Semiconductors
Specifications
Supplier Device Package ::
PG-TDSON-8-10
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
5000
Input Capacitance (Ciss) (Max) @ Vds ::
1755pF @ 25V
Package / Case ::
8-PowerVDFN
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
20A
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 175°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Logic Level Gate
Drain To Source Voltage (Vdss) ::
100V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
27nC @ 10V
Rds On (Max) @ Id, Vgs ::
22 MOhm @ 17A, 10V
Power - Max ::
60W
Vgs(th) (Max) @ Id ::
2.1V @ 25µA
Series ::
OptiMOS™
Manufacturer ::
Infineon Technologies
Introduction
The IPG20N10S4L22AATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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