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Home > products > Semiconductors > DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1

manufacturer:
Infineon Technologies
Description:
MOSFET MODULE 1200V 25A
Category:
Semiconductors
Specifications
Supplier Device Package ::
Module
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
1
Input Capacitance (Ciss) (Max) @ Vds ::
2000pF @ 800V
Package / Case ::
Module
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
25A
Packaging ::
Tray
@ Qty ::
0
Operating Temperature ::
-40°C ~ 150°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Silicon Carbide (SiC)
Drain To Source Voltage (Vdss) ::
1200V (1.2kV)
Mounting Type ::
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs ::
620nC @ 15V
Rds On (Max) @ Id, Vgs ::
45 MOhm @ 25A, 15V
Power - Max ::
20mW
Vgs(th) (Max) @ Id ::
5.5V @ 10mA
Series ::
CoolSiC™
Manufacturer ::
Infineon Technologies
Introduction
The DF23MR12W1M1B11BOMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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