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Home > products > Semiconductors > BSZ0910NDXTMA1

BSZ0910NDXTMA1

manufacturer:
Infineon Technologies
Description:
DIFFERENTIATED MOSFETS
Category:
Semiconductors
Specifications
Supplier Device Package ::
PG-WISON-8
Product Category ::
MOSFET
Factory Stock ::
0
Minimum Quantity ::
5000
Input Capacitance (Ciss) (Max) @ Vds ::
800pF @ 15V
Package / Case ::
8-PowerVDFN
Part Status ::
Active
Current - Continuous Drain (Id) @ 25°C ::
9.5A (Ta), 25A (Tc)
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Type ::
2 N-Channel (Dual)
FET Feature ::
Logic Level Gate, 4.5V Drive
Drain To Source Voltage (Vdss) ::
30V
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs ::
9.5 MOhm @ 9A, 10V
Power - Max ::
1.9W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id ::
2V @ 250µA
Series ::
OptiMOS™
Manufacturer ::
Infineon Technologies
Introduction
The BSZ0910NDXTMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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