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SQ1912AEEH-T1_GE3
manufacturer:
Vishay Semiconductors
Description:
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
0.8 A, 0.8 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SOT-363-6
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
20 V, 20 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
0.45 V, 0.45 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.2 Ohms, 0.2 Ohms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
+/- 12 V, +/- 12 V
Qg - Gate Charge ::
1.25 NC, 1.25 NC
Manufacturer ::
Vishay Semiconductors
Model Number:
SQ1912AEEH-T1_GE3
Introduction
The SQ1912AEEH-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQM120N10-3M8-GE3 |
MOSFET N-Channel 100V Automotive MOSFET
|
|
|
|
SQJ465EP-T1-GE3 |
MOSFET -60V -8A 45W TrenchFET
|
|
|
|
IRF720 |
MOSFET N-Chan 400V 3.0 Amp
|
|
|
|
SI7540DP-T1-E3 |
MOSFET N-and P-CHANNEL 30V
|
|
|
|
IRFI820G |
MOSFET N-Chan 500V 2.1 Amp
|
|
|
|
IRFD9010 |
MOSFET P-Chan 50V 1.1 Amp
|
|
|
|
VP1008B |
MOSFET 100V 5 OHM
|
|
|
|
IRFPC60 |
MOSFET N-Chan 600V 16 Amp
|
|
|
|
IRFP27N60K |
MOSFET N-Chan 600V 27 Amp
|
|
|
|
SI7804DN-T1-E3 |
MOSFET 30V 10A 0.0185Ohm
|
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