SQ2309ES-T1_GE3
manufacturer:
Vishay Semiconductors
Description:
MOSFET 60V -1.7A 2W AEC-Q101 Qualified
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 1.7 A
Mounting Style ::
SMD/SMT
Tradename ::
TrenchFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-236-3
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 2.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.268 Ohms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
8.5 NC
Manufacturer ::
Vishay Semiconductors
Introduction
The SQ2309ES-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQM120N10-3M8-GE3 |
MOSFET N-Channel 100V Automotive MOSFET
|
|
|
|
SQJ465EP-T1-GE3 |
MOSFET -60V -8A 45W TrenchFET
|
|
|
|
IRF720 |
MOSFET N-Chan 400V 3.0 Amp
|
|
|
|
SI7540DP-T1-E3 |
MOSFET N-and P-CHANNEL 30V
|
|
|
|
IRFI820G |
MOSFET N-Chan 500V 2.1 Amp
|
|
|
|
IRFD9010 |
MOSFET P-Chan 50V 1.1 Amp
|
|
|
|
VP1008B |
MOSFET 100V 5 OHM
|
|
|
|
IRFPC60 |
MOSFET N-Chan 600V 16 Amp
|
|
|
|
IRFP27N60K |
MOSFET N-Chan 600V 27 Amp
|
|
|
|
SI7804DN-T1-E3 |
MOSFET 30V 10A 0.0185Ohm
|
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