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SI1012R-T1-GE3

manufacturer:
Vishay Semiconductors
Description:
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
Category:
Semiconductors
Specifications
Technology ::
MOSFET (Metal Oxide)
On Resistance At Different Id And Vgs (maximum) ::
700 Milliohms @ 600mA, 4.5V
FET Type ::
N Channel
Vgs(th) (maximum) For Different Id ::
900mV @ 250µA
Vgs (maximum) ::
±6V
Product Family ::
Transistor-FET, MOSFET-single
Drive Voltage (Max Rds On, Min Rds On) ::
1.8V, 4.5V
Type Of Installation ::
Surface Mount Type
Gate Charge (Qg) (maximum) At Different Vgs ::
.75nC @ 4.5V
Power Dissipation (maximum) ::
150mW (Ta)
Operating Temperature ::
-55°C ~ 150°C (TJ)
Product Category ::
MOSFET
Drain-source Voltage (Vdss) ::
20V
Current At 25°C-Continuous Drain (Id) ::
500mA (Ta)
Manufacturer ::
Vishay Semiconductors
Model Number:
SI1012R-T1-GE3
Introduction
The SI1012R-T1-GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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