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Home > products > Semiconductors > IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1

IPB180P04P4L02ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 180 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-263-7
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 40 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 2.2 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
1.8 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 16 V
Qg - Gate Charge ::
286 NC
Manufacturer ::
Infineon Technologies
Introduction
The IPB180P04P4L02ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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