SIHG47N60E-GE3
manufacturer:
Vishay Semiconductors
Description:
MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS
Category:
Semiconductors
Specifications
Technology ::
MOSFET (Metal Oxide)
On Resistance At Different Id And Vgs (maximum) ::
64 Milliohms @ 24A, 10V
FET Type ::
N Channel
Vgs(th) (maximum) For Different Id ::
4V @ 250µA
Vgs (maximum) ::
±30V
Product Family ::
Transistor-FET, MOSFET-single
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Type Of Installation ::
Through Hole
Gate Charge (Qg) (maximum) At Different Vgs ::
220nC @ 10V
Power Dissipation (maximum) ::
357W (Tc)
Operating Temperature ::
-55°C ~ 150°C (TJ)
Product Category ::
MOSFET
Drain-source Voltage (Vdss) ::
600V
Input Capacitance (Ciss) (maximum) At Different Vds ::
9620pF @ 100V
Current At 25°C-Continuous Drain (Id) ::
47A (Tc)
Package/shell ::
TO-247-3
Manufacturer ::
Vishay Semiconductors
Introduction
The SIHG47N60E-GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SQM120N10-3M8-GE3 |
MOSFET N-Channel 100V Automotive MOSFET
|
|
|
|
SQJ465EP-T1-GE3 |
MOSFET -60V -8A 45W TrenchFET
|
|
|
|
IRF720 |
MOSFET N-Chan 400V 3.0 Amp
|
|
|
|
SI7540DP-T1-E3 |
MOSFET N-and P-CHANNEL 30V
|
|
|
|
IRFI820G |
MOSFET N-Chan 500V 2.1 Amp
|
|
|
|
IRFD9010 |
MOSFET P-Chan 50V 1.1 Amp
|
|
|
|
VP1008B |
MOSFET 100V 5 OHM
|
|
|
|
IRFPC60 |
MOSFET N-Chan 600V 16 Amp
|
|
|
|
IRFP27N60K |
MOSFET N-Chan 600V 27 Amp
|
|
|
|
SI7804DN-T1-E3 |
MOSFET 30V 10A 0.0185Ohm
|
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