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DMHC4035LSD-13

manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Comp H-Bridge ENH FET 20VGS
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel, P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 2.9 A, 4 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SO-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 40 V, 40 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 1 V, 3 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
58 MOhms, 100 MOhms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
11.1 NC, 12.5 NC
Manufacturer ::
Diodes Incorporated
Model Number:
DMHC4035LSD-13
Introduction
The DMHC4035LSD-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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