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DMN2011UFX-7

DMN2011UFX-7
manufacturer:
Diodes Incorporated
Description:
MOSFET Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
12.2 A, 12.2 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
V-DFN2050-4
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
20 V, 20 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
300 MV, 300 MV
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
13 MOhms, 13 MOhms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
12 V, 12 V
Qg - Gate Charge ::
56 NC, 56 NC
Manufacturer ::
Diodes Incorporated
Introduction
The DMN2011UFX-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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