IRFBE20PBF

manufacturer:
Vishay Semiconductors
Description:
MOSFET 800V Single N-Channel HEXFET
Category:
Semiconductors
Specifications
Technology ::
MOSFET (Metal Oxide)
On Resistance At Different Id And Vgs (maximum) ::
6.5 Ohm @ 1.1A, 10V
FET Type ::
N Channel
Vgs(th) (maximum) For Different Id ::
4V @ 250µA
Vgs (maximum) ::
±20V
Product Family ::
Transistor-FET, MOSFET-single
Drive Voltage (Max Rds On, Min Rds On) ::
10V
Type Of Installation ::
Through Hole
Gate Charge (Qg) (maximum) At Different Vgs ::
38nC @ 10V
Power Dissipation (maximum) ::
54W (Tc)
Operating Temperature ::
-55°C ~ 150°C (TJ)
Product Category ::
MOSFET
Drain-source Voltage (Vdss) ::
800V
Input Capacitance (Ciss) (maximum) At Different Vds ::
530pF @ 25V
Current At 25°C-Continuous Drain (Id) ::
1.8A (Tc)
Supplier Device Packaging ::
TO-220AB
Manufacturer ::
Vishay Semiconductors
Introduction
The IRFBE20PBF,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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Image | Part # | Description | |
---|---|---|---|
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SQM120N10-3M8-GE3 |
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