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Home > products > Semiconductors > DMN10H120SFG-13

DMN10H120SFG-13

manufacturer:
Diodes Incorporated
Description:
MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
3.8 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
PowerDI3333-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
100 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
1.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
68 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
10.6 NC
Manufacturer ::
Diodes Incorporated
Introduction
The DMN10H120SFG-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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