english
IXTK600N04T2
manufacturer:
IXYS
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
600 A
Mounting Style ::
Through Hole
Tradename ::
HiPerFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-264-3
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
40 V
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
1.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
1.5 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
590 NC
Manufacturer ::
IXYS
Model Number:
IXTK600N04T2
Introduction
The IXTK600N04T2,from IXYS,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
IXTN660N04T4 |
MOSFET 40V/660A TrenchT4 Power MOSFET
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|
|
|
IXFR10N100Q |
MOSFET MOSFET w/FAST Intrinsic Diode
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|
IXFT4N100Q |
MOSFET 4 Amps 1000V 2.8 Rds
|
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|
IXFR9N80Q |
MOSFET 9 Amps 800V
|
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|
|
IXFX30N50Q |
MOSFET 30 Amps 500V 0.16 Rds
|
|
|
|
IXFK80N20Q |
MOSFET 80 Amps 200V 0.03 Rds
|
|
|
|
IXFR70N15 |
MOSFET 67 Amps 150V 0.028 Rds
|
|
|
|
IXFH60N25Q |
MOSFET 60 Amps 250V 0.047 Rds
|
|
|
|
IXFR90N20 |
MOSFET 90 Amps 200V 0.025 Rds
|
|
|
|
IXFX180N085 |
MOSFET 180 Amps 85V 0.007 Rds
|
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