TK12E60W,S1VX
manufacturer:
Toshiba
Description:
MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Id - Continuous Drain Current ::
11.5 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-220-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
600 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
2.7 V To 3.7 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
300 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
25 NC
Manufacturer ::
Toshiba
Introduction
The TK12E60W,S1VX,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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