TK39N60W,S1VF
manufacturer:
Toshiba
Description:
MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Tradename ::
DTMOSIV
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-247-3
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
600 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
2.7 V To 3.7 V
Id - Continuous Drain Current ::
38.8 A
Rds On - Drain-Source Resistance ::
55 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
110 NC
Manufacturer ::
Toshiba
Introduction
The TK39N60W,S1VF,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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