TK100E06N1,S1X
manufacturer:
Toshiba
Description:
MOSFET 60V N-Ch PWR FET 1.9mOhm 10V 10uA
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Package / Case ::
TO-220-3
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Id - Continuous Drain Current ::
1 MA
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
10 V
Rds On - Drain-Source Resistance ::
1.9 MOhms
Manufacturer ::
Toshiba
Introduction
The TK100E06N1,S1X,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
TPH1R712MD,L1Q
MOSFET P-Channel Mosfet 20V UMOS-VI
TPCF8305LF(J
MOSFET P-Ch -20V FET 1.35W -4A 680pF
TPCC8008(TE12LQ)
MOSFET N-Ch 30V FET 25A 30W 30nC
TPC8123(TE12LQM)
MOSFET N-Ch -30V FET 2940pF -11A 1.9W
TPC8128(TE12LQM)
MOSFET N-Ch -30V FET 4800pF -16A 1.9W
TPCC8076,L1Q
MOSFET N-Ch 33V FET 27A 39W 2900pF 34nC
SSM3J113TU(TE85L)
MOSFET Vds=-20V Id=-1.7A 3Pin
TPC8040-H(TE12LQM)
MOSFET MOSFET
SSM3J109TU(TE85L)
MOSFET Vds=-20V Id=-2A 3Pin
TPCA8024(TE12L,Q,M
MOSFET MOSFET N-CH 30V, 35A
| Image | Part # | Description | |
|---|---|---|---|
|
|
TPH1R712MD,L1Q |
MOSFET P-Channel Mosfet 20V UMOS-VI
|
|
|
|
TPCF8305LF(J |
MOSFET P-Ch -20V FET 1.35W -4A 680pF
|
|
|
|
TPCC8008(TE12LQ) |
MOSFET N-Ch 30V FET 25A 30W 30nC
|
|
|
|
TPC8123(TE12LQM) |
MOSFET N-Ch -30V FET 2940pF -11A 1.9W
|
|
|
|
TPC8128(TE12LQM) |
MOSFET N-Ch -30V FET 4800pF -16A 1.9W
|
|
|
|
TPCC8076,L1Q |
MOSFET N-Ch 33V FET 27A 39W 2900pF 34nC
|
|
|
|
SSM3J113TU(TE85L) |
MOSFET Vds=-20V Id=-1.7A 3Pin
|
|
|
|
TPC8040-H(TE12LQM) |
MOSFET MOSFET
|
|
|
|
SSM3J109TU(TE85L) |
MOSFET Vds=-20V Id=-2A 3Pin
|
|
|
|
TPCA8024(TE12L,Q,M |
MOSFET MOSFET N-CH 30V, 35A
|
Send RFQ
Stock:
MOQ: