TK39J60W5,S1VQ
manufacturer:
Toshiba
Description:
MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
38.8 A
Mounting Style ::
Through Hole
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-3PN-3
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
600 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2.7 V To 3.7 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
55 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
30 V
Qg - Gate Charge ::
110 NC
Manufacturer ::
Toshiba
Introduction
The TK39J60W5,S1VQ,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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