Send Message
Home > products > Semiconductors > IPT007N06NATMA1

IPT007N06NATMA1

IPT007N06NATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
300 A
Mounting Style ::
SMD/SMT
Tradename ::
OptiMOS
Minimum Operating Temperature ::
- 55 C
Package / Case ::
HSOF-8
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2.1 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
660 UOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
287 NC
Manufacturer ::
Infineon Technologies
Introduction
The IPT007N06NATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: