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Home > products > Semiconductors > BSB028N06NN3 G

BSB028N06NN3 G

BSB028N06NN3 G
manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
SMD/SMT
Tradename ::
OptiMOS
Minimum Operating Temperature ::
- 40 C
Package / Case ::
WDSON-2-3
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Id - Continuous Drain Current ::
90 A
Rds On - Drain-Source Resistance ::
2.8 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
108 NC
Manufacturer ::
Infineon Technologies
Introduction
The BSB028N06NN3 G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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