SQJB42EP-T1_GE3
manufacturer:
Siliconix / Vishay
Description:
MOSFET Dual N-Channel 40V PowerPAK
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
30 A, 30 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
PowerPAK-SO-8L
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
40 V, 40 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2.5 V, 2.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.0079 Ohms, 0.0079 Ohms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V, +/- 20 V
Qg - Gate Charge ::
30 NC, 30 NC
Manufacturer ::
Siliconix / Vishay
Introduction
The SQJB42EP-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SUP85N02-03-E3 |
MOSFET 20V 85A 250W
|
|
|
|
SQM120P04-04L-GE3 |
MOSFET P-Channel 40V Automotive MOSFET
|
|
|
|
SQ3481EV-T1-GE3 |
MOSFET P-Channel 30V Automotive MOSFET
|
|
|
|
SI5402DC-T3 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
|
|
|
|
VQ1004P-2 |
MOSFET QSB14LD VNDQ06
|
|
|
|
2N6660JTXP02 |
MOSFET 19500/547 JANTX2N6660P w/ Pind
|
|
|
|
VQ1001P-2 |
MOSFET MOSPOWER TRANSISTOR
|
|
|
|
IRLU024 |
MOSFET N-Chan 60V 14 Amp
|
|
|
|
SIHG22N60S-E3 |
MOSFET 600V N-Channel Superjunction TO-247
|
|
|
|
SI6441DQ-T1-GE3 |
MOSFET 30V 8.0A 1.75W 15mohm @ 10V
|
|
|
|
SI7973DP-T1-E3 |
MOSFET 12V 12.8A 1.4W
|
|
|
|
SI7894ADP-T1-GE3 |
MOSFET 30V 25A 5.4W 3.6mohm @ 10V
|
|
|
|
SIHB24N65ET5-GE3 |
MOSFET N-Channel 650V
|
|
|
|
SI6991DQ-T1-GE3 |
MOSFET 30V 4.2A 1.14W 40mohm @ 10V
|
|
|
|
SIHG44N65EF-GE3 |
MOSFET N-Ch 700V Vds w/ Fast Body Diode
|
|
|
|
SIHA24N65EF-E3 |
MOSFET N-Ch 700V Vds w/ Fast Body Diode
|
|
|
|
SI7684DP-T1-GE3 |
MOSFET 30V 20A 27.5W 9.0mohm @ 10V
|
|
|
|
SUM60N04-06T-E3 |
MOSFET 40V 60A 200W w/Sensing Diode
|
|
|
|
SIHP25N40D-E3 |
MOSFET N-Channel 400V
|
|
|
|
SI4638DY-T1-GE3 |
MOSFET 30V 22.4A 5.9W 6.5mohm @ 10V
|
|
|
|
SIHG22N60EL-GE3 |
MOSFET N-Channel 600V
|
|
|
|
SI4803DY-T1-GE3 |
MOSFET 20V 5.0A 3.0W 65mohm @ 4.5V
|
|
|
|
SIE850DF-T1-GE3 |
MOSFET 30V 164A 104W 2.5mohm @ 10V
|
|
|
|
SIHH20N50E-T1-GE3 |
MOSFET N-Ch 550V Vds 9nC Qgs
|
|
|
|
SI7973DP-T1-GE3 |
MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V
|
|
|
|
SI4304DY-T1-E3 |
MOSFET 30V 36A 7.8W
|
|
|
|
SIHFIB16N50K-E3 |
MOSFET 500V 6.7A 45W 350mohm @ 10V
|
|
|
|
SI5443DC-T1-GE3 |
MOSFET 20V 4.9A 2.5W 65mohm @ 4.5V
|
|
|
|
SQJ403EP-T1_GE3 |
MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
|
|
|
|
SI4334DY-T1-E3 |
MOSFET 30V 14.8A 5.2W
|
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