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DMC1229UFDB-7

DMC1229UFDB-7
manufacturer:
Diodes Incorporated
Description:
MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel, P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 3.8 A, 5.6 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
U-DFN2020-B-6
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 12 V, 12 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 1 V, 1 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
29 MOhms, 61 MOhms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
+/- 8 V
Qg - Gate Charge ::
10.5 NC, 10.7 NC
Manufacturer ::
Diodes Incorporated
Introduction
The DMC1229UFDB-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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