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Home > products > Semiconductors > BSZ086P03NS3GXT

BSZ086P03NS3GXT

BSZ086P03NS3GXT
manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 40 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TSDSON-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 30 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
- 3.1 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
6.5 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 25 V
Qg - Gate Charge ::
57.5 NC
Manufacturer ::
Infineon Technologies
Introduction
The BSZ086P03NS3GXT,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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