IPB029N06N3GE8187ATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 120A D2PAK-2
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
SMD/SMT
Package / Case ::
TO-263-3
Vds - Drain-Source Breakdown Voltage ::
60 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2 V
Id - Continuous Drain Current ::
120 A
Rds On - Drain-Source Resistance ::
2.9 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
53 NC
Manufacturer ::
Infineon Technologies
Introduction
The IPB029N06N3GE8187ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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