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Home > products > Semiconductors > IPB049NE7N3GATMA1

IPB049NE7N3GATMA1

manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS 3
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Id - Continuous Drain Current ::
80 A
Mounting Style ::
SMD/SMT
Tradename ::
OptiMOS
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-263-3
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
75 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
2.3 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
4.4 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
68 NC
Manufacturer ::
Infineon Technologies
Introduction
The IPB049NE7N3GATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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