SQV120N10-3M8_GE3
manufacturer:
Siliconix / Vishay
Description:
MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Id - Continuous Drain Current ::
120 A
Mounting Style ::
Through Hole
Tradename ::
TrenchFET
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TO-262-3
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
100 V
Technology ::
Si
Vgs Th - Gate-Source Threshold Voltage ::
2.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.003 Ohms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
+/- 20 V
Qg - Gate Charge ::
190 NC
Manufacturer ::
Siliconix / Vishay
Introduction
The SQV120N10-3M8_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
SUP85N02-03-E3 |
MOSFET 20V 85A 250W
|
|
|
|
SQM120P04-04L-GE3 |
MOSFET P-Channel 40V Automotive MOSFET
|
|
|
|
SQ3481EV-T1-GE3 |
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|
|
|
|
SI5402DC-T3 |
MOSFET 30V 6.7A 2.5W 35mohm @ 10V
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|
VQ1004P-2 |
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|
|
|
|
2N6660JTXP02 |
MOSFET 19500/547 JANTX2N6660P w/ Pind
|
|
|
|
VQ1001P-2 |
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|
|
|
|
IRLU024 |
MOSFET N-Chan 60V 14 Amp
|
|
|
|
SIHG22N60S-E3 |
MOSFET 600V N-Channel Superjunction TO-247
|
|
|
|
SI6441DQ-T1-GE3 |
MOSFET 30V 8.0A 1.75W 15mohm @ 10V
|
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