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SQ3585EV-T1_GE3

SQ3585EV-T1_GE3
manufacturer:
Vishay Semiconductors
Description:
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel, P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
3.57 A, - 2.5 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
TSOP-6
Maximum Operating Temperature ::
+ 175 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
20 V, - 20 V
Packaging ::
Reel
Vgs Th - Gate-Source Threshold Voltage ::
0.6 V, - 1.5 V
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
0.049 Ohms, 0.14 Ohms
Number Of Channels ::
2 Channel
Vgs - Gate-Source Voltage ::
+/- 12 V, +/- 12 V
Qg - Gate Charge ::
2.5 NC, 3.5 NC
Manufacturer ::
Vishay Semiconductors
Introduction
The SQ3585EV-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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