STY100NM60N
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Package / Case ::
Max247-3
Vds - Drain-Source Breakdown Voltage ::
600 V
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
4 V
Id - Continuous Drain Current ::
74 A
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
25 V
Rds On - Drain-Source Resistance ::
29 MOhms
Manufacturer ::
STMicroelectronics
Model Number:
STY100NM60N
Introduction
The STY100NM60N,from STMicroelectronics,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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