STY100NM60N
manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
MOSFET
Mounting Style ::
Through Hole
Package / Case ::
Max247-3
Vds - Drain-Source Breakdown Voltage ::
600 V
Packaging ::
Tube
Vgs Th - Gate-Source Threshold Voltage ::
4 V
Id - Continuous Drain Current ::
74 A
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
25 V
Rds On - Drain-Source Resistance ::
29 MOhms
Manufacturer ::
STMicroelectronics
Introduction
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