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Home > products > Semiconductors > SI4435DYPBF

SI4435DYPBF

manufacturer:
IR / Infineon
Description:
MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC
Category:
Semiconductors
Specifications
Transistor Polarity ::
P-Channel
Technology ::
Si
Id - Continuous Drain Current ::
- 8 A
Mounting Style ::
SMD/SMT
Minimum Operating Temperature ::
- 55 C
Package / Case ::
SO-8
Maximum Operating Temperature ::
+ 150 C
Channel Mode ::
Enhancement
Vds - Drain-Source Breakdown Voltage ::
- 30 V
Packaging ::
Tube
Product Category ::
MOSFET
Rds On - Drain-Source Resistance ::
20 MOhms
Number Of Channels ::
1 Channel
Vgs - Gate-Source Voltage ::
20 V
Qg - Gate Charge ::
40 NC
Manufacturer ::
IR / Infineon
Introduction
The SI4435DYPBF,from IR / Infineon,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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