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R6003KND3TL1
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 600V 3A TO252
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
185 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Power Dissipation (Max):
44W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6003
Model Number:
R6003KND3TL1
Introduction
N-Channel 600 V 3A (Tc) 44W (Tc) Surface Mount TO-252
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