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IDT10S60C
manufacturer:
Infineon Technologies
Description:
DIODE SIL CARB 600V 10A TO220-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
140 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Package:
Bulk
Series:
ThinQ!™
Capacitance @ Vr, F:
480pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
10A (DC)
Speed:
No Recovery Time > 500mA (Io)
Model Number:
IDT10S60C
Introduction
Diode 600 V 10A (DC) Through Hole PG-TO220-2-2
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