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VS-3C04ET07T-M3
manufacturer:
Vishay General Semiconductor - Diodes Division
Description:
650 V POWER SIC GEN 3 MERGED PIN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
25 µA @ 650 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 4 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
175pF @ 1V, 1MHz
Supplier Device Package:
TO-220AC
Reverse Recovery Time (trr):
0 Ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
4A
Speed:
No Recovery Time > 500mA (Io)
Model Number:
VS-3C04ET07T-M3
Introduction
Diode 650 V 4A Through Hole TO-220AC
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