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BSC010NE2LSIATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 25V 38A/100A TDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
59 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.05mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4200 PF @ 12 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-7
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
38A (Ta), 100A (Tc)
Power Dissipation (Max):
2.5W (Ta), 96W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC010
Model Number:
BSC010NE2LSIATMA1
Introduction
N-Channel 25 V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
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