TJ15P04M3,RQ(S
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 10 V
Rds On (Max) @ Id, Vgs:
36mOhm @ 7.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1100 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
DPAK
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Power Dissipation (Max):
29W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TJ15P04
Model Number:
TJ15P04M3,RQ(S
Introduction
P-Channel 40 V 15A (Ta) 29W (Tc) Surface Mount DPAK
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