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IDH08S120
manufacturer:
Infineon Technologies
Description:
DIODE SIL CARB 1.2KV 7.5A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
180 µA @ 1200 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 7.5 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
380pF @ 1V, 1MHz
Supplier Device Package:
PG-TO220-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
Infineon Technologies
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-220-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
7.5A
Speed:
No Recovery Time > 500mA (Io)
Model Number:
IDH08S120
Introduction
Diode 1200 V 7.5A Through Hole PG-TO220-2
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