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ES1JLHRVG
manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 600V 1A SUB SMA
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 1 A
Package:
Tape & Reel (TR)
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
8pF @ 4V, 1MHz
Supplier Device Package:
Sub SMA
Reverse Recovery Time (trr):
35 Ns
Mfr:
Taiwan Semiconductor Corporation
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 150°C
Package / Case:
DO-219AB
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
ES1J
Model Number:
ES1JLHRVG
Introduction
Diode 600 V 1A Surface Mount Sub SMA
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