PMV100EPAR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
17 NC @ 10 V
Rds On (Max) @ Id, Vgs:
130mOhm @ 2.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
616 PF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Power Dissipation (Max):
710mW (Ta), 8.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV100
Model Number:
PMV100EPAR
Introduction
P-Channel 60 V 2.2A (Ta) 710mW (Ta), 8.3W (Tc) Surface Mount TO-236AB
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