english
DMT6006SPS-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V PWRDI5060
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
27.9 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 10.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1721 PF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI5060-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
16.2A (Ta), 98A (Tc)
Power Dissipation (Max):
2.45W (Ta), 89.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT6006
Model Number:
DMT6006SPS-13
Introduction
N-Channel 60 V 16.2A (Ta), 98A (Tc) 2.45W (Ta), 89.3W (Tc) Surface Mount PowerDI5060-8
Send RFQ
Stock:
MOQ: