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PHT6NQ10T,135
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 100V 3A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Rds On (Max) @ Id, Vgs:
90mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
633 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-223
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Power Dissipation (Max):
1.8W (Ta), 8.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHT6NQ10
Model Number:
PHT6NQ10T,135
Introduction
N-Channel 100 V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
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