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DMN1019UVT-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 12V 10.7A TSOT26
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
50.4 NC @ 8 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 9.7A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2588 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSOT-26
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
10.7A (Ta)
Power Dissipation (Max):
1.73W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN1019
Model Number:
DMN1019UVT-7
Introduction
N-Channel 12 V 10.7A (Ta) 1.73W (Ta) Surface Mount TSOT-26
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