GB02SHT06-46
manufacturer:
GeneSiC Semiconductor
Description:
DIODE SIL CARBIDE 600V 4A TO46
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 1 A
Package:
Bulk
Series:
-
Capacitance @ Vr, F:
76pF @ 1V, 1MHz
Supplier Device Package:
TO-46
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 225°C
Package / Case:
TO-206AB, TO-46-3 Metal Can
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
4A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB02SHT06
Introduction
Diode 600 V 4A Through Hole TO-46
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