GB05MPS33-263
manufacturer:
GeneSiC Semiconductor
Description:
DIODE SIL CARB 3.3KV 14A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 3000 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
3 V @ 5 A
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
288pF @ 1V, 1MHz
Supplier Device Package:
TO-263-7
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Voltage - DC Reverse (Vr) (Max):
3300 V
Current - Average Rectified (Io):
14A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
GB05MPS33
Introduction
Diode 3300 V 14A Surface Mount TO-263-7
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