GD10MPS12H
manufacturer:
GeneSiC Semiconductor
Description:
DIODE SIL CARB 1.2KV 10A TO247-2
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Operating Temperature - Junction:
175°C
Mounting Type:
Through Hole
Package:
Tube
Series:
SiC Schottky MPS™
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-247-2
Reverse Recovery Time (trr):
0 Ns
Mfr:
GeneSiC Semiconductor
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-2
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Introduction
Diode 1200 V 10A Through Hole TO-247-2
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